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IL205AT/206AT/207AT/ 208AT
FEATURES
* High Current Transfer Ratio, IF=10mA,
VCE=5 V IL205AT, 40 - 80% IL206AT, 63 -125% IL207AT, 100 - 200% IL208AT, 160 - 320% High BVCEO, 70 V Isolation Voltage, 2500 VACRMS Industry Standard SOIC-8 Surface Mountable Package Standard Lead Spacing, .05" Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A) Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering Underwriters Lab File #E52744 (Code Letter P)
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
Package Dimensions in Inches (mm)
.120.005 (3.05.13) .240 (6.10) Pin One ID .192.005 (4.88.13) .004 (.10) .008 (.20) .050 (1.27) typ. .021 (.53) Anode .154.005 Cathode C L (3.91.13) NC NC .016 (.41) .015.002 (.38.05) .008 (.20) 1 2 3 4 8 7 6 5 NC Base Collector Emitter
* * * * * * *
40
7 .058.005 (1.49.13) .125.005 (3.18.13) Lead Coplanarity .0015 (.04) max.
5 max. R.010 (.25) max.
.020.004 (.15.10) 2 plcs.
TOLERANCE: .005 (unless otherwise noted)
DESCRIPTION
The IL205AT/206AT/207AT/208AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL205/6/7/8 come in a standard SOIC-8 small outline package for surface mounting which makes them ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 volts gives a higher safety margin compared to the industry standard 30 volts. Maximum Ratings Emitter Peak Reverse Voltage ....................................... 6.0 V Continuous Forward Current .......................... 60 mA Power Dissipation at 25C ............................. 90 mW Derate Linearly from 25C ....................... 1.2 mW/C Detector Collector-Emitter Breakdown Voltage ................ 70 V Emitter-Collector Breakdown Voltage .................. 7 V Collector-Base Breakdown Voltage ................... 70 V Power Dissipation ........................................ 150 mW Derate Linearly from 25C ....................... 2.0 mW/C Package Total Package Dissipation at 25C Ambient (LED + Detector) ...................................... 240 mW Derate Linearly from 25C ....................... 3.3 mW/C Storage Temperature ..................... -55C to +150C Operating Temperature ................. -55C to +100C Soldering Time at 260C ............................... 10 sec. Semiconductor Group Characteristics (TA=25C)
Symbol Min. Typ. Max. Unit Condition
Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Collector-Emitter Emitter-Collector Collector-Emitter Dark Current Collector-Emitter Capacitance Package DC Current Transfer IL205AT IL206AT IL207AT IL208AT DC Current Transfer IL205AT IL206AT IL207AT IL208AT Collector-Emitter Saturation Voltage Isolation Test Voltage Equivalent DC Isolation Voltage Capacitance, Input to Output Resistance, Input to Output Switching Time
VF IR CO BVCEO 70 BVECO 7 I CEOdark CCE CTRDC 40 63 100 160 CTRDC 13 22 34 56 VCE sat V IO 2500 3535 C IO R IO tON, tOFF
1.3 0.1 25
1.5 100
V A pF V V
IF=10 mA VR=6.0 V VR=0 IC=100 A IE=100 A VCE=10 V, I F=0 VCE =0 IF=10 mA, VCE=5 V
10 5 10 50
nA pF %
80 125 200 320 % 25 40 60 95 0.4 VACRMS VDC 0.5 100 3.0 pF G s IC=2 mA, RE=100 , VCE=10 V IC=2.0 mA, IF=10 mA IF=1 mA, VCE=5 V
Specifications subject to change.
4-1
10.95
Figure 1. Forward voltage versus forward current
Figure 2. Normalized non-saturated and saturated CTRce versus LED current
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 1 10 IF - Forward Current - mA 100 Ta = 85C Ta = 25C Ta = -55C
1.5
NCTRce - Normalized CTRce
VF - Forward Voltage - V
1.0
Normalized to: Vce = 10 V IF = 10 mA Ta = 25C
Vce = 5 V
0.5
Vce = 0.4 V 0.0 .1 1 10 IF - LED Current - mA 100
NIcb - Normalized Icb
Figure 3. Collector-emitter current versus LED current 150 Ta = 25C
Figure 4. Normalized collector-base photocurrent versus LED current
100
Ice - Collector-emitter Current - mA
Vce = 10 V
100
Normalized to: Vcb = 9.3 V 10 IF = 1 mA Ta = 25 C
1 .1 .1 1 10 IF - LED Current - mA 100
50 Vce = 0.4 V 0 .1 1 10 IF - LED Current - mA 100
Figure 5. Normalized collector-base photocurrent versus LED current
10
NIcb - Normalized Icb
Icb - Collector-base Current - A
1
Normalized to: Vcb = 9.3 V IF = 10 mA Ta = 25 C
Figure 6. Collector-base photocurrent versus LED current 1000 Ta = 25C
100 10 1 .1
Vcb = 9.3 V
.1
.01 .1
1 10 IF - LED Current - mA
100
.1
1
10
100
IF - LED Current - mA
Figure 8. Normalized saturated HFE versus base current and temperature
Iceo - Collector-Emitter - nA
NHFE(sat) - Normalized Saturated HFE
Figure 7. Collector-emitter leakage current versus temperature 5 10 4 10 3 10 10 2
2.0 1.5 1.0 25C
70C 50C
Normalized to: Ib = 20A Vce = 10 V Ta = 25 C
10
1
Vce = 10V TYPICAL
10 0 10 -1 10 -2 -20
Vce = 0.4 V 0.5 0.0 1 10 100 Ib - Base Current - A 1000
0 20 40 60 80 100 Ta - Ambient Temperature - C
Semiconductor Group
4-2
Figure 9. Typical switching characteristics versus base resistance (saturated operation) 100
Figure 10. Typical switching times versus load resistance
Switching time (S)
Switching time (s)
Input: IF =10mA 50 Pulse width=100 mS Duty cycle=50%
1000
T OF
F
Input: 500 IF=10 mA Pulse width=100 mS Duty cycle=50% 100 50 10 5 1
TO
FF
10 5
TON
TON
1.0 10K 50K 100K 500K 1M
0.1
0.5 1
5
10
50 100
Base-emitter resistance, RBE ()
Load resistance RL (K)
Semiconductor Group
4-3

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